A new isolation method for single crystal silicon MEMS and its application to z-axis microgyroscope

Author

Sangjun Park ; Jongpal Kim ; Donghun Kwak ; Hyoungho Ko ; Carr, W. ; Buss, J. ; Dong-il Cho

Author_Institution

Sch. of Electr. Eng. & Comput. Sci, Seoul Nat. Univ., South Korea

fYear

2003

fDate

8-10 Dec. 2003

Abstract

This paper presents a new method for electrically isolating the released high-aspect ratio single crystal silicon MEMS structures. In this method, horizontal dielectric layers are implanted at arbitrary depths in any desired region of a wafer, using the Sacrificial Bulk Micromachining (SBM) process. A z-axis microgyroscope is fabricated by the proposed method. The measured noise-equivalent angular rate resolution is 0.0074/spl deg//sec, the input range is larger than /spl plusmn/ 50/spl deg//sec, and the measured bandwidth is 7.3 Hz. The proposed method achieves electrical isolation with excellent mechanical stability, and is free from the footing phenomenon.

Keywords

Coriolis force; elemental semiconductors; gyroscopes; isolation technology; micromachining; microsensors; silicon; Coriolis force; Si; horizontal dielectric layers; isolation method; mechanical stability; noise-equivalent angular rate resolution; process flow; released high-aspect ratio structures; sacrificial bulk micromachining; single crystal silicon MEMS; z-axis microgyroscope; Application software; Dielectrics; Electric variables measurement; Electrodes; Etching; Mechanical variables measurement; Micromachining; Micromechanical devices; Noise measurement; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269440

Filename

1269440