Observation of persistent photoconductivity and modified permittivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures

Author

Mouneyrac, D. ; Hartnett, John ; Le Floch, J.-M. ; Tobar, M.E. ; Cros, D. ; Krupka, Jerzy

Author_Institution

Sch. of Phys., Univ. of Western Australia, Crawley, WA, Australia

fYear

2009

fDate

20-24 April 2009

Firstpage

886

Lastpage

889

Abstract

The whispering gallery modes have been used to characterize the effect of the light on gallium arsenide and gallium phosphide placed in darkness at 50 K at frequencies respectively equal to 18.94 GHz and 11.54 GHz. The experiment shows a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity and the loss tangent of the semiconductor are modified by shifting of the free electrons from the valence band to the conduction band.

Keywords

III-V semiconductors; conduction bands; electron-hole recombination; gallium arsenide; gallium compounds; permittivity; photoconductivity; valence bands; whispering gallery modes; GaAs; GaP; conduction band; cryogenic temperatures; free electron-hole creation; free electron-hole recombination; frequency 11.54 GHz; frequency 18.94 GHz; loss tangent; permittivity; photoconductivity; polarization state; temperature 50 K; valence band; whispering gallery modes; Cryogenics; Frequency; Gallium arsenide; Gallium compounds; III-V semiconductor materials; Optical polarization; Permittivity; Photoconductivity; Temperature; Whispering gallery modes;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2009 Joint with the 22nd European Frequency and Time forum. IEEE International

Conference_Location

Besancon

ISSN

1075-6787

Print_ISBN

978-1-4244-3511-1

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2009.5168314

Filename

5168314