Title :
Observation of persistent photoconductivity and modified permittivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures
Author :
Mouneyrac, D. ; Hartnett, John ; Le Floch, J.-M. ; Tobar, M.E. ; Cros, D. ; Krupka, Jerzy
Author_Institution :
Sch. of Phys., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
The whispering gallery modes have been used to characterize the effect of the light on gallium arsenide and gallium phosphide placed in darkness at 50 K at frequencies respectively equal to 18.94 GHz and 11.54 GHz. The experiment shows a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity and the loss tangent of the semiconductor are modified by shifting of the free electrons from the valence band to the conduction band.
Keywords :
III-V semiconductors; conduction bands; electron-hole recombination; gallium arsenide; gallium compounds; permittivity; photoconductivity; valence bands; whispering gallery modes; GaAs; GaP; conduction band; cryogenic temperatures; free electron-hole creation; free electron-hole recombination; frequency 11.54 GHz; frequency 18.94 GHz; loss tangent; permittivity; photoconductivity; polarization state; temperature 50 K; valence band; whispering gallery modes; Cryogenics; Frequency; Gallium arsenide; Gallium compounds; III-V semiconductor materials; Optical polarization; Permittivity; Photoconductivity; Temperature; Whispering gallery modes;
Conference_Titel :
Frequency Control Symposium, 2009 Joint with the 22nd European Frequency and Time forum. IEEE International
Conference_Location :
Besancon
Print_ISBN :
978-1-4244-3511-1
Electronic_ISBN :
1075-6787
DOI :
10.1109/FREQ.2009.5168314
