• DocumentCode
    2593752
  • Title

    Conducted EMC prediction for a power converter with SiC components

  • Author

    Rondon, Eliana ; Morel, Florent ; Vollaire, Christian ; Ferber, Moises ; Schanen, Jean-Luc

  • Author_Institution
    Lab. Ampere, Univ. de Lyon, Écully, France
  • fYear
    2012
  • fDate
    21-24 May 2012
  • Firstpage
    281
  • Lastpage
    284
  • Abstract
    This paper presents a model of a power converter with SiC components in order to predict the conducted perturbation that it generates (at the LISN level). Some methods to create a model of any passive elements (parasitic capacitance and inductance, decoupling capacitors, load, LISN) as an equivalent circuit are shown. Finally the complete model of the converter is presented and confronted to experimental measurements. Comparisons show a good behaviour until 30MHz.
  • Keywords
    electromagnetic compatibility; equivalent circuits; power convertors; silicon compounds; wide band gap semiconductors; SiC; SiC components; conducted EMC prediction; electromagnetic compatibility; equivalent circuit; passive elements; power converter; Abstracts; Electromagnetic compatibility; Frequency measurement; Impedance; Impedance measurement; Indium phosphide; Phase measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4577-1557-0
  • Electronic_ISBN
    978-1-4577-1558-7
  • Type

    conf

  • DOI
    10.1109/APEMC.2012.6237867
  • Filename
    6237867
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2593752