Conducted EMC prediction for a power converter with SiC components

This paper presents a model of a power converter with SiC components in order to predict the conducted perturbation that it generates (at the LISN level). Some methods to create a model of any passive elements (parasitic capacitance and inductance, decoupling capacitors, load, LISN) as an equivalent circuit are shown. Finally the complete model of the converter is presented and confronted to experimental measurements. Comparisons show a good behaviour until 30MHz.