Improvements in the instantaneous-bandwidth capability of RF power transistors using in-package high-k capacitors

Summary form only given, as follows. RF power transistors, by design, have an upper limit to the input-signal bandwidth that can be amplified without incurring excessive distortion. In this paper, we demonstrate a technique to improve the ‘video-bandwidth’ (VBW) capability of RF Power transistors using high-k capacitors. The improvement is more than 2 times a standard device. Also, digital predistortion performance is demonstrated with excellent results for narrow band as well as wideband signals (50MHz).