• DocumentCode
    2593950
  • Title

    UHiFET - a new high-frequency High-Voltage device

  • Author

    Ezzeddine, A.K. ; Huang, Howard C. ; Singer, J.L.

  • Author_Institution
    AMCOM Communications, Gaithersburg, United States
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. The HiFET (High-Impedance, High-Voltage FET) configuration is used to connect several semiconductor FETs both DC and RF in series. The HiFET power and efficiency degrade at high microwave frequencies (i.e. 3GHz) due to gate leakage currents. In this article, we propose a new configuration, the Universal HiFET (UHiFET), which uses an additional compensation to improve the power, efficiency and linearity of the original HiFET configuration at microwave and millimeter wave frequencies.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973295
  • Filename
    5973295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2593950