Title :
A High Sensitivity Monolithic Photoreceiver At 2 Gb/s Incorporating InP/InGaAs Phototransistor And Bipolar Transistors
Author :
Chandrasekhar, S. ; Gnauck, A.H. ; Hamm, R.A. ; Qua, C.J.
Author_Institution :
AT&T Bell Laboratories
fDate :
July 29 1992-Aug. 12 1992
Keywords :
Circuits; Electrons; Frequency response; Indium gallium arsenide; Indium phosphide; Phototransistors;
Conference_Titel :
Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels, LEOS 1992 Summer Topical Meeting Digest on
Conference_Location :
Santa Barbara, CA, USA
DOI :
10.1109/LEOSST.1992.697448
