DocumentCode :
2594290
Title :
Fabrication Of A Monolithically Integrated InP-based Waveguide-pin Photodiode Field-effect Transistor Transimpedance Receiver OEIC
Author :
Bauer, J.G. ; Albrecht, H. ; Lauterbach, C. ; Hoffmann, L. ; Romer, D. ; Ebbinghaus, G.
Author_Institution :
Siemens Research Laboratories
fYear :
1992
fDate :
July 29 1992-Aug. 12 1992
Keywords :
FETs; Frequency; Indium phosphide; Iron; JFET circuits; Optical device fabrication; Optoelectronic devices; PIN photodiodes; Resistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels, LEOS 1992 Summer Topical Meeting Digest on
Conference_Location :
Santa Barbara, CA, USA
Type :
conf
DOI :
10.1109/LEOSST.1992.697449
Filename :
697449
Link To Document :
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