Title :
A Microwave Phase and Gain Controller with Segmented-Dual-Gate MESFETs in GaAs MMICs
Author :
Hwang, Y.C. ; Chen, Y.K.
Abstract :
A novel segmented-dual-gate MESFET device which provides precise gain control over broad microwave bandwidth by using prescribed gate-width-ratio is presented. The digitally-controlled precision microwave gain scaler has potential application as an ultra-wide band microwave attenuator or active microwave phase shifter. The design and test results of GaAs MMIC active attenuator and hybrid phase shifter are described.
Keywords :
Equivalent circuits; FETs; Gain control; Gallium arsenide; Geometry; Laboratories; MESFETs; MMICs; Microwave devices; Microwave technology;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1984.1113615
