Miniature RF MEMS metal-contact switches for DC-20 GHz applications

Summary form only given, as follows. This paper presents the design and measurement of a miniature RF MEMS metal-contact switch. Measured S-parameters on a single switch show an up-state capacitance of 5 fF and a 13–14 Ω contact resistance for a Au-Ru contact under an actuation voltage of 55 V. Then, 10 miniature RF MEMS switches have been placed in parallel and result in an up-state capacitance of 30 fF and a switch resistance of 1.4 Ω. The switch is robust to stress effects which increases its yield on large wafers.