Performance Comparison of Thin-Film Transistors Fabricated Using Different Purity Semiconducting Nanotubes

Author

Narasimhamurthy, K.C. ; Paily, Roy

Author_Institution

Dept. of Electron. & Commun. Eng., Indian Inst. of Technol. Guwahati, Guwahati, India

fYear

2011

fDate

2-7 Jan. 2011

Firstpage

208

Lastpage

213

Abstract

In this paper, fabrication and characterization of semi conducting nanotube thin-film transistors (SN-TFTs) using 90% and 95% purity semi conducting single walled carbon nanotubes (SWCNTs) are presented. The wafer scale fabrication of SN-TFTs are carried out on 2 inch Si wafers. Pre-separated semi conducting SWCNTs are deposited on amino-silane treated Si/SiO₂ surface. A simple method is suggested for silanization in order to improve the carbon nanotube density more than 30 nanotubes/μm2. SN-TFTs fabricated using both 90% and 95% enriched semi conducting SWCNTs have exhibited p-type output characteristic with excellent linear and saturation region of operation along with high on-off current ratio and steep sub threshold slope.

Keywords

carbon nanotubes; elemental semiconductors; nanofabrication; nanotube devices; organic compounds; thin film transistors; C; SN-TFT fabrication; SWCNT; Si-SiO₂; on-off current ratio; p-type output characteristic; performance comparison; purity semiconducting single walled carbon nanotube; semiconducting nanotube thin-film transistors; silanization; size 2 inch; steep subthreshold slope; wafer scale fabrication; Gold; Logic gates; Nanotubes; Scanning electron microscopy; Silicon; Surface treatment; Thin film transistors; Carrier mobility; On-off current ratio; Single wall carbon nanotube; Sub-threshold slope; Thin-film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design (VLSI Design), 2011 24th International Conference on

Conference_Location

Chennai

ISSN

1063-9667

Print_ISBN

978-1-61284-327-8

Electronic_ISBN

1063-9667

Type

conf

DOI

10.1109/VLSID.2011.59

Filename

5718803