• DocumentCode
    2595007
  • Title

    Intrinsically switchable, BST-on-silicon composite FBARs

  • Author

    Sis, Seyit Ahmet ; Lee, V.C. ; Mortazawi, Amir

  • Author_Institution
    University of Michigan, Ann Arbor, United States
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. This paper presents a DC voltage dependent switchable, composite thin film bulk acoustic wave (FBAR) resonator at 1.82 GHz. The resonator consists of barium stronium titanate-on-silicon in which barium stronium titanate (BST) is primarily used for transduction. The electrostrictive property of BST is exploited to turn the resonator on and off by applying a DC voltage. The device exhibits a quality factor of 157 and 301 at its series and parallel resonance frequencies, respectively.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973355
  • Filename
    5973355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2595007