Title :
Investigation of high-speed modulaiton of 1.3μm InAs/InGaAs quantum dot VCSELs
Author :
Tong, C.Z. ; Xu, D.W. ; Yoon, S.F. ; Ding, Y. ; Fan, W.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The influence of quantum dot (QD) density, uniformity and layer number on the 3 dB bandwidth of 1.3 mum InAs-InGaAs QD VCSELs is investigated by the small signal analysis of all-pathway rate equations. The dependence of bandwidth on the QD density is shown. Linearly dependence of bandwidth on the QD uniformity is demonstrated. High speed operation (> 10 GHz) of QD VCSEL emitting at 1.3 mum is predicated.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; quantum dot lasers; surface emitting lasers; InAs-InGaAs; all-pathway rate equations; high-speed modulation; quantum dot VCSEL; quantum dot density; small signal analysis; vertical-cavity surface-emitting laser; wavelength 1.3 mum; Bandwidth; Distributed Bragg reflectors; Equations; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum dots; Signal analysis; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Broadband Network & Multimedia Technology, 2009. IC-BNMT '09. 2nd IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4590-5
Electronic_ISBN :
978-1-4244-4591-2
DOI :
10.1109/ICBNMT.2009.5347816
