DocumentCode :
2595470
Title :
Digital predistorted inverse class-F GaN PA with novel PAPR reduction technique
Author :
Wang, Jiacheng ; Xu, Yan ; Zhu, Xinen
Author_Institution :
Southeast University, Nanjing, China
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given, as follows. In this paper, a digital predistorted inverse class-F GaN power amplifier with novel PAPR reduction technique is presented, in which not only peaks but also valleys of signal are clipped to reduce the PAPR as much as possible. The inverse class-F PA is implemented with Cree´s CGH40010 GaN HEMT which delivers output power of 10 W. For a 20 MHz wideband OFDM signal, adjacent channel power ratio (ACPR) of the proposed PA decreases from −35.4 dBc to −51.9 dBc, and drain efficiency of the PA is 31.3% at an average output power of 33.6 dBm.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5973379
Filename :
5973379
Link To Document :
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