Title :
Effect of annealing temperature on dark current density of silicon nanocrystals embedded in a nitride matrix for photovoltaic application
Author :
Fangsuwannarak, T. ; Scardera, Giuseppe
Author_Institution :
Sch. of Electr. Eng., Suranaree Univ. of Technol., Nakhon Ratchasima
Abstract :
The purpose of using high density nano-crystalline silicon embedded in insulator matrices is the energy confinement of Si based quantum dot nanostructures. This approach aims to engineer wide band gap Si materials to be used as upper cell elements in Si based tandem cells in order to increased efficiency and low cost thin film processes. One of the main challenges is to obtain sufficient carrier mobility and hence a reasonably conductivity for photovoltaic application. The results of current density as a function of thermal annealing show the evolution of SiQD formation in Si3N4 matrix. As deposited film fabricated by using dual-mode PECVD has composition of ordered Si rich nitride (Si3+xN4) arrays.
Keywords :
annealing; carrier mobility; current density; dark conductivity; elemental semiconductors; nanostructured materials; silicon; solar cells; wide band gap semiconductors; Si; annealing temperature; carrier mobility; dark current density; dual-mode PECVD; energy confinement; high density nanocrystalline silicon; insulator matrices; nitride arrays; quantum dot nanostructures; thermal annealing; wide band gap materials; Annealing; Carrier confinement; Dark current; Insulation; Nanocrystals; Photovoltaic systems; Quantum dots; Silicon; Solar power generation; Temperature; Nanocrystal; Silicon; Solar cell; Third generation;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on
Conference_Location :
Krabi
Print_ISBN :
978-1-4244-2101-5
Electronic_ISBN :
978-1-4244-2102-2
DOI :
10.1109/ECTICON.2008.4600551
