Title :
A pad ICIM model for EMC immunity simulation
Author :
Mao, Wei ; Li, Weiying ; Tian, Yu ; Vrignon, B. ; Shepherd, J. ; Wang, Richard
Author_Institution :
Freescale Semicond. (China) Ltd., Beijing, China
Abstract :
Accurate prediction of the response of integrated circuit (IC) to electromagnetic interferences (EMI) is increasingly important. In this paper, a precise integrated circuit immunity model (ICIM) of electrostatic discharge (ESD) protection pads is developed and validated. The model consists of a parasitic RC network model and an ESD snapback model. The parameters of the physically-based parasitic RC network model are extracted from specifically designed structures with ESD pads and validated by S-parameter measurement data. The combined model is able to predict the immunity level more precisely and better support the immunity simulation of circuit under direct power injection (DPI) test.
Keywords :
RC circuits; S-parameters; electromagnetic compatibility; electrostatic discharge; integrated circuit modelling; EMC immunity simulation; EMI; ESD protection pad; ESD snapback model; S-parameter measurement data; circuit immunity simulation; direct power injection test; electromagnetic interference; electrostatic discharge protection pad; injection DPI test; integrated circuit immunity model; integrated circuit response prediction; pad ICIM model; parasitic RC network model; physically-based parasitic RC network model; Data models; Electromagnetic compatibility; Electrostatic discharges; Frequency measurement; Gold; Integrated circuit modeling; Transient analysis;
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1557-0
Electronic_ISBN :
978-1-4577-1558-7
DOI :
10.1109/APEMC.2012.6237993