DocumentCode
2595955
Title
A pad ICIM model for EMC immunity simulation
Author
Mao, Wei ; Li, Weiying ; Tian, Yu ; Vrignon, B. ; Shepherd, J. ; Wang, Richard
Author_Institution
Freescale Semicond. (China) Ltd., Beijing, China
fYear
2012
fDate
21-24 May 2012
Firstpage
397
Lastpage
400
Abstract
Accurate prediction of the response of integrated circuit (IC) to electromagnetic interferences (EMI) is increasingly important. In this paper, a precise integrated circuit immunity model (ICIM) of electrostatic discharge (ESD) protection pads is developed and validated. The model consists of a parasitic RC network model and an ESD snapback model. The parameters of the physically-based parasitic RC network model are extracted from specifically designed structures with ESD pads and validated by S-parameter measurement data. The combined model is able to predict the immunity level more precisely and better support the immunity simulation of circuit under direct power injection (DPI) test.
Keywords
RC circuits; S-parameters; electromagnetic compatibility; electrostatic discharge; integrated circuit modelling; EMC immunity simulation; EMI; ESD protection pad; ESD snapback model; S-parameter measurement data; circuit immunity simulation; direct power injection test; electromagnetic interference; electrostatic discharge protection pad; injection DPI test; integrated circuit immunity model; integrated circuit response prediction; pad ICIM model; parasitic RC network model; physically-based parasitic RC network model; Data models; Electromagnetic compatibility; Electrostatic discharges; Frequency measurement; Gold; Integrated circuit modeling; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-4577-1557-0
Electronic_ISBN
978-1-4577-1558-7
Type
conf
DOI
10.1109/APEMC.2012.6237993
Filename
6237993
Link To Document