A new current sensor based on the Miller effect highly immune to EMI

Author

Aiello, Orazio ; Fiori, Franco

Author_Institution

Eln. Dept., Politec. di Torino, Torino, Italy

fYear

2012

fDate

21-24 May 2012

Firstpage

69

Lastpage

72

Abstract

This paper deals with the susceptibility to electromagnetic interference (EMI) of circuits used in smart power integrated circuits to sense the current of power transistors. The susceptibility of a conventional current sensor based on the mirroring principle is first investigated. Then a new circuit that avoids the electrical connection of the current sensor to the power transistor drain terminal is proposed. The susceptibility of the above mentioned current sensors is discussed and evaluated by means of time-domain computer simulations.

Keywords

electric sensing devices; electromagnetic devices; electromagnetic interference; power integrated circuits; power transistors; EMI; Miller effect; current sensor; electrical connection avoidance; electromagnetic interference; mirroring principle; power transistor drain terminal; smart power integrated circuits; time-domain computer simulations; MOSFET circuits; Magnetic susceptibility; Switches; Time frequency analysis; Transistors; Wireless communication; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4577-1557-0

Electronic_ISBN

978-1-4577-1558-7

Type

conf

DOI

10.1109/APEMC.2012.6238001

Filename

6238001