DocumentCode
2596143
Title
Behavioral ESD protection modeling to perform system level ESD efficient design
Author
Caignet, Fabrice ; Monnereau, Nicolas ; Nolhier, Nicolas ; Bafleur, Marise
Author_Institution
Lab. of Archit. & Anal. of Syst. (LAAS), Univ. of Toulouse (UPS), Toulouse, France
fYear
2012
fDate
21-24 May 2012
Firstpage
401
Lastpage
404
Abstract
For both Equipment Manufacturers (EM) and semiconductor suppliers, the prediction of ElectroStatic Discharge (ESD) events into design phase is becoming a challenging issue to insure rehability into system level considerations. This is mainly due to the shrinking of Integrated Circuits (IC) technology, which decreases the robustness level and increase the probability of failures. In this paper, we will present how to build IC´s models taking into account behavioral description of ESD protections, to perform system level ESD simulations. The IBIS (Input/output Buffer Information Specification) models are mixed with information extracted from Transmission Line Pulsing (TLP) measurement´s techniques to build system simulations. The methodology is detailed and proved in some case studies addressing the current propagation path and the susceptibility of the ICs. The main goal of the proposed model is that it could be shared by IC suppliers and EMs to ensure that ICs can handle system level ESD events.
Keywords
electrostatic discharge; failure analysis; integrated circuit design; integrated circuit modelling; integrated circuit reliability; ESD event prediction; ESD simulation; IBIS model; IC model; IC susceptibility; IC technology; TLP measurement technique; behavioral ESD protection modeling; design phase; electrostatic discharge event; equipment manufacturers; failure probability; input-output buffer information specification; integrated circuit technology; robustness level; semiconductor suppliers; system level ESD efficiency design; transmission line pulsing measurement technique; Capacitance; Electrostatic discharges; Integrated circuit modeling; Predictive models; Stress; Thyristors; EMC; IBIS; System Level ESD;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-4577-1557-0
Electronic_ISBN
978-1-4577-1558-7
Type
conf
DOI
10.1109/APEMC.2012.6238002
Filename
6238002
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