• DocumentCode
    2596143
  • Title

    Behavioral ESD protection modeling to perform system level ESD efficient design

  • Author

    Caignet, Fabrice ; Monnereau, Nicolas ; Nolhier, Nicolas ; Bafleur, Marise

  • Author_Institution
    Lab. of Archit. & Anal. of Syst. (LAAS), Univ. of Toulouse (UPS), Toulouse, France
  • fYear
    2012
  • fDate
    21-24 May 2012
  • Firstpage
    401
  • Lastpage
    404
  • Abstract
    For both Equipment Manufacturers (EM) and semiconductor suppliers, the prediction of ElectroStatic Discharge (ESD) events into design phase is becoming a challenging issue to insure rehability into system level considerations. This is mainly due to the shrinking of Integrated Circuits (IC) technology, which decreases the robustness level and increase the probability of failures. In this paper, we will present how to build IC´s models taking into account behavioral description of ESD protections, to perform system level ESD simulations. The IBIS (Input/output Buffer Information Specification) models are mixed with information extracted from Transmission Line Pulsing (TLP) measurement´s techniques to build system simulations. The methodology is detailed and proved in some case studies addressing the current propagation path and the susceptibility of the ICs. The main goal of the proposed model is that it could be shared by IC suppliers and EMs to ensure that ICs can handle system level ESD events.
  • Keywords
    electrostatic discharge; failure analysis; integrated circuit design; integrated circuit modelling; integrated circuit reliability; ESD event prediction; ESD simulation; IBIS model; IC model; IC susceptibility; IC technology; TLP measurement technique; behavioral ESD protection modeling; design phase; electrostatic discharge event; equipment manufacturers; failure probability; input-output buffer information specification; integrated circuit technology; robustness level; semiconductor suppliers; system level ESD efficiency design; transmission line pulsing measurement technique; Capacitance; Electrostatic discharges; Integrated circuit modeling; Predictive models; Stress; Thyristors; EMC; IBIS; System Level ESD;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4577-1557-0
  • Electronic_ISBN
    978-1-4577-1558-7
  • Type

    conf

  • DOI
    10.1109/APEMC.2012.6238002
  • Filename
    6238002