DocumentCode :
2596375
Title :
Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits
Author :
Asbeck, P.M. ; Wang, K.C. ; Miller, Douglas L. ; Sullivan, G.J. ; Sheng, N.H. ; Sovero, E.A. ; Higgins, J.A.
Volume :
87
Issue :
1
fYear :
1987
fDate :
31929
Firstpage :
1
Lastpage :
5
Abstract :
This paper reviews the present status of GaAIAs/ GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with fmax above 100 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain of 200 per stage. Breakdown voltages (BVCBO) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.
Keywords :
Doping; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Material storage; Microwave devices; Millimeter wave integrated circuits; Photonic band gap; Substrates; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
Type :
conf
DOI :
10.1109/MCS.1987.1114503
Filename :
1114503
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2596375
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