DocumentCode :
2596420
Title :
44 GHz Monolithic Low Noise Amplifier
Author :
Berenz, J. ; Yen, H.C. ; Esfandiari, R. ; Nakano, K. ; Sato, Takao ; Velebir, J. ; Ip, K.
Volume :
87
Issue :
1
fYear :
1987
fDate :
31929
Firstpage :
15
Lastpage :
18
Abstract :
The design, fabrication, and performance of a single-stage 44 GHz monolithic HEMT low noise amplifier are described. The chip includes a single heterojunction HEMT with matching and biasing circuits. Greater than 5 dB gain was measured from 43.5 to 45.5 GHz and a noise figure of 5 dB with the associated gain of 5.5 dB was achieved at 44.5 GHz. The chip size is 1.25mm x 1.0mm.
Keywords :
Circuit noise; Fabrication; Frequency; Gallium arsenide; HEMTs; Low-noise amplifiers; Microwave amplifiers; Microwave devices; Performance gain; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
Type :
conf
DOI :
10.1109/MCS.1987.1114506
Filename :
1114506
Link To Document :
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