Title :
44 GHz Monolithic Low Noise Amplifier
Author :
Berenz, J. ; Yen, H.C. ; Esfandiari, R. ; Nakano, K. ; Sato, Takao ; Velebir, J. ; Ip, K.
Abstract :
The design, fabrication, and performance of a single-stage 44 GHz monolithic HEMT low noise amplifier are described. The chip includes a single heterojunction HEMT with matching and biasing circuits. Greater than 5 dB gain was measured from 43.5 to 45.5 GHz and a noise figure of 5 dB with the associated gain of 5.5 dB was achieved at 44.5 GHz. The chip size is 1.25mm x 1.0mm.
Keywords :
Circuit noise; Fabrication; Frequency; Gallium arsenide; HEMTs; Low-noise amplifiers; Microwave amplifiers; Microwave devices; Performance gain; Scattering parameters;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1987.1114506
