Title :
Monolithic MBE GaAs Pin Diode Limiter
Author :
Seymour, David J. ; Heston, David D. ; Lehmann, Randall E.
Abstract :
A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration.
Keywords :
Bonding; Circuits; Diodes; FETs; Fabrication; Gallium arsenide; Gold; Insertion loss; Microstrip; Radar;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1987.1114511
