DocumentCode
2596619
Title
Two stage dual Gate MESFET Monolithic Gain Control Amplifier for Ka-Band
Author
Sokolov, V. ; Geddes, J. ; Contolatis, A.
Volume
87
Issue
1
fYear
1987
fDate
31929
Firstpage
75
Lastpage
79
Abstract
A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.
Keywords
Antenna arrays; Equivalent circuits; FETs; Feeds; Frequency; Gain control; Integrated circuit noise; MESFETs; Phased arrays; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1987.1114519
Filename
1114519
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