• DocumentCode
    2596665
  • Title

    Ion Implanted W-Band Monolithic Balanced Mixers for Broadband Applications

  • Author

    Trinh, T.N. ; Wong, W.S. ; Li, D. ; Kessler, J.R.

  • Volume
    87
  • Issue
    1
  • fYear
    1987
  • fDate
    31929
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    An all ion-implanted monolithic broadband balanced mixer fabricated on a GaAs substrate for operation at W-band frequencies is described. A deep implanted buried n+ layer was used to minimize the diode series resistance. Ohmic contacts were formed by standard alloying of planar eutectic AuGe metallization into the n+ layer. The mixer diode structure is completely compatible with GaAs MESFET-based monolithic integrated circuit processing techniques. A conversion loss from 6.8 to 10 dB has been measured over an RF range of 75 to 88 GHz, with a LO drive of 10 dBm at 92 GHz.
  • Keywords
    Alloying; Diodes; Electrical resistance measurement; Frequency; Gallium arsenide; MESFET integrated circuits; Metallization; Mixers; Monolithic integrated circuits; Ohmic contacts;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1987.1114522
  • Filename
    1114522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2596665