Author :
Hung, H.-L.A. ; Ezzeddine, A. ; Holdeman, L.B. ; Phelleps, F.R. ; Allison, J.F. ; Cornfeld, A.B. ; Smith, T. ; Huang, H.C.
Abstract :
GaAs power MMIC amplifiers with an optimized FET structure operating at Ka-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mw. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mw at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of MMICs with on-chip bias and DC blocking at Ka-band.
