• DocumentCode
    2596699
  • Title

    Ka-band Monolithic GaAs Power FET Amplifiers

  • Author

    Hung, H.-L.A. ; Ezzeddine, A. ; Holdeman, L.B. ; Phelleps, F.R. ; Allison, J.F. ; Cornfeld, A.B. ; Smith, T. ; Huang, H.C.

  • Volume
    87
  • Issue
    1
  • fYear
    1987
  • fDate
    31929
  • Firstpage
    97
  • Lastpage
    100
  • Abstract
    GaAs power MMIC amplifiers with an optimized FET structure operating at Ka-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mw. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mw at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of MMICs with on-chip bias and DC blocking at Ka-band.
  • Keywords
    Capacitors; Circuits; FETs; Fingers; Gain; Laboratories; MMICs; Power amplifiers; Power generation; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1987.1114524
  • Filename
    1114524
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2596699