Title :
A Low Noise Distributed Amplifier with Gain Control
Author :
Hutchinson, Craig ; Kennan, Wayne
Abstract :
A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.
Keywords :
Contracts; Distributed amplifiers; Gain control; Gallium arsenide; Impedance; MMICs; Microwave FETs; Microwave technology; Noise figure; Transmission lines;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1987.1114529
