Title :
10-MHz DC/DC converter based on GaN HEMT for RF applications
Author :
Gamand, F. ; Giacomo, V. Di ; Gaquière, C.
Author_Institution :
Inst. of Electron., Microelectron. & Nanotechnol. (IEMN), Villeneuve-d´´Ascq, France
Abstract :
AlGaN/GaN HEMTs show low on-state resistance and relatively small gate-drain capacitance, which makes them good candidate for switching applications. Up to now, their exploitation in DC/DC converter has been investigated in power electronics, obtaining very good results by means of high-power devices. In this paper, the potentialities of RF GaN HEMTs are investigated for DC/DC converters. The interest of such converters can be significant, for instance, for high-efficiency power amplifiers based on dynamic bias control.
Keywords :
DC-DC power convertors; capacitance; high electron mobility transistors; power electronics; DC/DC converter; HEMT; RF application; dynamic bias control; frequency 10 MHz; gate-drain capacitance; high efficiency power amplifiers; high power device; on-state resistance; power electronics; switching application; Aluminum gallium nitride; Argon; Gallium nitride; HEMTs; Switches; TV; DC/DC converter; Dynamic bias; GaN devices; High Efficiency;
Conference_Titel :
Telecommunications Energy Conference (INTELEC), 2011 IEEE 33rd International
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4577-1249-4
Electronic_ISBN :
2158-5210
DOI :
10.1109/INTLEC.2011.6099887
