10-MHz DC/DC converter based on GaN HEMT for RF applications

Author

Gamand, F. ; Giacomo, V. Di ; Gaquière, C.

Author_Institution

Inst. of Electron., Microelectron. & Nanotechnol. (IEMN), Villeneuve-d´´Ascq, France

fYear

2011

fDate

9-13 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

AlGaN/GaN HEMTs show low on-state resistance and relatively small gate-drain capacitance, which makes them good candidate for switching applications. Up to now, their exploitation in DC/DC converter has been investigated in power electronics, obtaining very good results by means of high-power devices. In this paper, the potentialities of RF GaN HEMTs are investigated for DC/DC converters. The interest of such converters can be significant, for instance, for high-efficiency power amplifiers based on dynamic bias control.

Keywords

DC-DC power convertors; capacitance; high electron mobility transistors; power electronics; DC/DC converter; HEMT; RF application; dynamic bias control; frequency 10 MHz; gate-drain capacitance; high efficiency power amplifiers; high power device; on-state resistance; power electronics; switching application; Aluminum gallium nitride; Argon; Gallium nitride; HEMTs; Switches; TV; DC/DC converter; Dynamic bias; GaN devices; High Efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Energy Conference (INTELEC), 2011 IEEE 33rd International

Conference_Location

Amsterdam

ISSN

2158-5210

Print_ISBN

978-1-4577-1249-4

Electronic_ISBN

2158-5210

Type

conf

DOI

10.1109/INTLEC.2011.6099887

Filename

6099887