• DocumentCode
    2596855
  • Title

    On-wafer measurements of S-MMIC amplifiers from 400–500 GHz

  • Author

    Samoska, L.A. ; Fung, Andy ; Pukala, D. ; Kangaslahti, Pekka ; Lai, Richard ; Sarkozy, Stephen ; Mei, X.B. ; Boll, G.

  • Author_Institution
    California Institute of Technology, Pasadena, United States
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. In this paper, we describe the design, simulation, and on-wafer measurements of Submillimeter-wave Monolithic Integrated Circuit (S-MMIC) amplifiers having gain in the 400–500 GHz range. The amplifiers have been fabricated by Northrop Grumman´s (NGC) 35-nm InP high electron mobility transistor (HEMT) process. We measured approximately 10 dB of gain at 474 GHz for a three-stage amplifier, with over 9 dB of gain at 490 GHz.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973454
  • Filename
    5973454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2596855