DocumentCode :
2596866
Title :
Towards heterogeneous optoelectronics integration by low temperature 3D wafer bonding
Author :
Yoo, S.J.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA
fYear :
2012
fDate :
22-23 May 2012
Firstpage :
37
Lastpage :
37
Abstract :
Silicon CMOS and optoelectronics can greatly benefit from heterogeneous integration of compound semiconductors and dielectric waveguides by low temperature 3D wafer bonding. This paper will review progress of optoelectronics realized by low temperature 3D wafer bonding and discuss prospects of future computing and telecommunication systems-on-chip.
Keywords :
integrated optoelectronics; system-on-chip; telecommunication; wafer bonding; heterogeneous optoelectronics integration; low temperature 3D wafer bonding; telecommunication systems-on-chip; CMOS integrated circuits; Indium phosphide; Semiconductor optical amplifiers; Silicon; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
Type :
conf
DOI :
10.1109/LTB-3D.2012.6238045
Filename :
6238045
Link To Document :
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