DocumentCode
2596881
Title
Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization
Author
Tan, Chuan Seng ; Lim, Dau Fatt ; Peng, Lan ; Li, Hong Yu
Author_Institution
Nanyang Technol. Univ., Singapore, Singapore
fYear
2012
fDate
22-23 May 2012
Firstpage
45
Lastpage
45
Abstract
In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high density 3D IC realization.
Keywords
copper; integrated circuit bonding; monolayers; passivation; self-assembly; three-dimensional integrated circuits; Cu; Cu surface passivation; Cu-Cu; high density 3D IC realization; low temperature Cu-Cu bonding; non-UHV method; noncorrosive method; self-assembled monolayer; Bonding; Integrated circuits; Oxidation; Passivation; Stacking; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4673-0743-7
Type
conf
DOI
10.1109/LTB-3D.2012.6238046
Filename
6238046
Link To Document