DocumentCode :
2597012
Title :
The study on the micro-voids of InP/Si and InP/SiO2 wafer bonding by infrared transmission and scanning acoustic microscopy
Author :
Zhang, Xuan Xiong ; Ou, Yi ; Yang, Fan ; Ye, Tian Chun ; Zhuang, Song Lin
fYear :
2012
fDate :
22-23 May 2012
Firstpage :
85
Lastpage :
85
Abstract :
Low temperature wafer bonding for InP/Si and InP/SiO2 was studied. Scanning acoustic microscopy (SAM) has to be used for characterizing the bonding interface to determine if there are micro-voids (<;1 μm) at the interface although infrared imaging is available to InP/Si and InP/SiO2 bonding. The micro-voids also appear in the wafer bonding with oxide.
Keywords :
III-V semiconductors; acoustic microscopy; elemental semiconductors; indium compounds; silicon; silicon compounds; voids (solid); wafer bonding; InP-Si; InP-SiO2; bonding interface; infrared imaging; infrared scanning acoustic microscopy; infrared transmission acoustic microscopy; low temperature wafer bonding; microvoid; Acoustics; Annealing; Bonding; Indium phosphide; Microscopy; Silicon; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
Type :
conf
DOI :
10.1109/LTB-3D.2012.6238054
Filename :
6238054
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2597012
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