Title :
SOI platform and III-V integrated active photonic device by direct bonding for data communication
Author :
Li, Linghan ; Higo, Akio ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
R-GIRO, Ritsumeikan Univ., Kusatsu, Japan
Abstract :
The recent research progress of Si/III-V hetero-integration by Ar/O2 plasma assisted direct bonding in air ambient was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved. The InGaAsP MQW layer was bonded onto the SOI platform to realize several hetero-integrated active photonic devices such as a direct-current-pumped Fabry-Perot Laser and a waveguide photodiode. The Si/III-V Fabry-Perot Laser demonstrated cw operation under 5°C with 75mA threshold current. The Si/III-V photodiode showed 65% quantum efficiency at 1550nm.
Keywords :
III-V semiconductors; integrated optics; photodiodes; semiconductor lasers; silicon-on-insulator; III-V heterointegration; III-V integrated active photonic device; InGaAsP; SOI microrib; SOI platform; current injection; data communication; direct-current-pumped Fabry-Perot laser; heterointegrated active photonic devices; plasma assisted direct bonding; waveguide photodiode; Argon; Bonding; Photodiodes; Photonics; Plasmas; Silicon; Waveguide lasers;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238055
