SOI platform and III-V integrated active photonic device by direct bonding for data communication

Author

Li, Linghan ; Higo, Akio ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

R-GIRO, Ritsumeikan Univ., Kusatsu, Japan

fYear

2012

fDate

22-23 May 2012

Firstpage

87

Lastpage

87

Abstract

The recent research progress of Si/III-V hetero-integration by Ar/O₂ plasma assisted direct bonding in air ambient was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved. The InGaAsP MQW layer was bonded onto the SOI platform to realize several hetero-integrated active photonic devices such as a direct-current-pumped Fabry-Perot Laser and a waveguide photodiode. The Si/III-V Fabry-Perot Laser demonstrated cw operation under 5°C with 75mA threshold current. The Si/III-V photodiode showed 65% quantum efficiency at 1550nm.

Keywords

III-V semiconductors; integrated optics; photodiodes; semiconductor lasers; silicon-on-insulator; III-V heterointegration; III-V integrated active photonic device; InGaAsP; SOI microrib; SOI platform; current injection; data communication; direct-current-pumped Fabry-Perot laser; heterointegrated active photonic devices; plasma assisted direct bonding; waveguide photodiode; Argon; Bonding; Photodiodes; Photonics; Plasmas; Silicon; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4673-0743-7

Type

conf

DOI

10.1109/LTB-3D.2012.6238055

Filename

6238055