• DocumentCode
    2597109
  • Title

    A Comprehensive Model Of Inversion Layer Hole Mobility For Simulation Of Submicron Mosfets

  • Author

    Agostinelli, V.M. ; Shin, H. ; Tasch, A.F.

  • Author_Institution
    The University of Texas-Austin
  • fYear
    1990
  • fDate
    3-4 Jun 1990
  • Firstpage
    39
  • Lastpage
    40
  • Keywords
    Charge carrier processes; Doping; Equations; MOSFETs; Particle scattering; Phonons; Rough surfaces; Semiconductor process modeling; Surface roughness; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
  • Type

    conf

  • DOI
    10.1109/NUPAD.1990.748266
  • Filename
    748266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597109