DocumentCode
2597117
Title
Simplified Simulation Of Gaas Mesfets With Semi-insulating Substrates Compensated By Deep Levels
Author
Horio, K. ; Fuseya, Y. ; Kusuki, H. ; Yanai, H.
Author_Institution
Shibaura Institute of Technology
fYear
1990
fDate
3-4 Jun 1990
Firstpage
41
Lastpage
42
Keywords
Buffer layers; Charge carrier processes; Chromium; Electron devices; Electron traps; Gallium arsenide; MESFETs; Neodymium; Poisson equations; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
Type
conf
DOI
10.1109/NUPAD.1990.748267
Filename
748267
Link To Document