Title :
Numerical Simulation Of Two-dimensional Electron Transport In AlGaAs/InGaAs/GaAs Pseudomorphic Hemt´s
Author :
Wang, Tahui ; Hsieh, Cheng-Hsiang
Author_Institution :
National Chiao-Tung University
Keywords :
Density functional theory; Electron devices; Gallium arsenide; HEMTs; Indium gallium arsenide; Numerical simulation; PHEMTs; Poisson equations; Schrodinger equation; Steady-state;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
DOI :
10.1109/NUPAD.1990.748271
