• DocumentCode
    2597197
  • Title

    Atomic diffusion bonding of wafers in air with thin Au films and its application to optical devices fabrication

  • Author

    Shimatsu, T. ; Uomoto, M. ; Oba, K. ; Furukata, Y.

  • Author_Institution
    RIEC, Tohoku Univ., Sendai, Japan
  • fYear
    2012
  • fDate
    22-23 May 2012
  • Firstpage
    103
  • Lastpage
    103
  • Abstract
    Atomic diffusion bonding (ADB) of two flat wafers in air with Au films was studied. Experimental results indicate that wafers can be bonded in air with bonding strength of greater than 25 MPa using only 1 nm total thickness of Au and Cr underlayer on each side.
  • Keywords
    integrated optics; wafer bonding; atomic diffusion bonding; optical devices fabrication; wafers; Bonding; Diffusion bonding; Films; Gold; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4673-0743-7
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2012.6238063
  • Filename
    6238063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597197