Title :
Comparison of SAB methods for room temperature bonding of Si wafers
Author :
Oshikawa, Keigo ; Wang, Chenxi ; Fujino, Masahisa ; Suga, Tadatomo ; Iguchi, Kenichi ; Nakawaza, Haruo ; Takahashi, Yoshikazu
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
Three variations of SAB method are compared for Si-Si direct bonding at room temperature. The bonded interfaces are characterized by amorphous layers depending on the surface activation processes by ion beam or plasma irradiation.
Keywords :
amorphous semiconductors; bonding processes; elemental semiconductors; silicon; surface treatment; SAB methods; Si-Si; amorphous layers; direct bonding; ion beam irradiation; plasma irradiation; room temperature bonding; surface activation processes; temperature 293 K to 298 K; Bonding; Iron; Plasma temperature; Silicon; Surface cleaning;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238066
