Title :
A 67% PAE, 100 W GaN power amplifier with on-chip harmonic tuning circuits for C-band space applications
Author :
Miwa, Shinsuke ; Kittaka, Y. ; Tanii, T. ; Yamasaki, T. ; Kamo, Yoshitaka ; Tsukahara, Yuki ; Kohno, M. ; Goto, Satoshi ; Shima, Akio
Author_Institution :
Mitsubishi Electric Corporation, Itami, Japan
Abstract :
Summary form only given, as follows. This paper describes a high efficiency and high output power GaN power amplifier for C-band space applications. The amplifier uses on-chip harmonic tuned FETs to improve efficiency. A 2nd harmonic input tuning circuit is incorporated into each unit on-chip FET cell and realizes highly precise control of 2nd harmonic input impedance. A 100 W power amplifier with 4-chips achieves a 67.0% PAE at 3.7 GHz. To the best of our knowledge, this is the highest efficiency of C-band high power amplifiers.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973478
