• DocumentCode
    2597357
  • Title

    Modeling a SCR-based protection structure for RF-ESD co-design simulations

  • Author

    Romanescu, A. ; Ferrari, P. ; Arnould, J. ; Fonteneau, P. ; Legrand, C.

  • Author_Institution
    Institute of Microelectronics Electromagnetism and Photonics, Grenoble, France
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. Electrostatic discharge protection is a must in every integrated circuit. At microwave frequencies, the influence the protection devices have over the circuit they protect can significantly impact the functioning of the latter. A model for the SCR (silicon controlled rectifier) and the ESD protection diode was developed. Its purpose is to estimate this influence at frequencies up to 65 GHz. A complex device, the DTSCR (diode triggered SCR) is used to demonstrate the consistency of the models.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973482
  • Filename
    5973482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597357