A simple method to determine power-dissipation dependent thermal resistance for GaN HEMTs

Summary form only given, as follows. A simple method to determine the power dissipation dependent thermal resistance and the junction temperature of a power AlGaN/GaN HEMT proposed. The method is based on a rigorous mathematical treatment of the nonlinear characteristics of thermal resistance. It is hence suitable for modeling of transistors operating at any power densities. This method has been verified by an accurate predicting of junction temperature of an 8×80 micrometer ×0.3 micrometer AlGaN/GaN HEMT.