DocumentCode
2597468
Title
Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas
Author
Shimatsu, T. ; Uomoto, M.
Author_Institution
RIEC, Tohoku Univ., Sendai, Japan
fYear
2012
fDate
22-23 May 2012
Firstpage
155
Lastpage
155
Abstract
Atomic diffusion bonding (ADB) of two flat wafers in an inert gas with thin metal films was studied. Its performance was compared to that of ADB “in vacuum.” Results suggest that ADB can be conducted in Ar gas using almost any metal film, as is true also for bonding in vacuum.
Keywords
diffusion bonding; inert gases; nanostructured materials; thin films; Ar; atomic diffusion bonding; flat wafers; inert gas; thin metal films; thin nanocrystalline metal films; vacuum; Argon; Bonding; Diffusion bonding; Films; Metals; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4673-0743-7
Type
conf
DOI
10.1109/LTB-3D.2012.6238077
Filename
6238077
Link To Document