Title :
Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas
Author :
Shimatsu, T. ; Uomoto, M.
Author_Institution :
RIEC, Tohoku Univ., Sendai, Japan
Abstract :
Atomic diffusion bonding (ADB) of two flat wafers in an inert gas with thin metal films was studied. Its performance was compared to that of ADB “in vacuum.” Results suggest that ADB can be conducted in Ar gas using almost any metal film, as is true also for bonding in vacuum.
Keywords :
diffusion bonding; inert gases; nanostructured materials; thin films; Ar; atomic diffusion bonding; flat wafers; inert gas; thin metal films; thin nanocrystalline metal films; vacuum; Argon; Bonding; Diffusion bonding; Films; Metals; Silicon; Substrates;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238077
