Surface activated bonding and transfer of Carbon Nanotube bumps to Au substrates

Author

Fujino, Masahisa ; Terasaka, Hidenori ; Suga, Tadatomo ; Soga, Ikuo ; Konde, D. ; Ishizuki, Yoshikatsu ; Iwai, Taisuke

Author_Institution

Sch. of Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2012

fDate

22-23 May 2012

Firstpage

159

Lastpage

159

Abstract

In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (CNTs) were bonded to Au substrate as multilayer interconnect. In order to lower interconnect resistance between the CNT bumps and the Au substrate, the CNT bumps were covered with Au layer by Ar magnetron sputter, subsequently the CNT bumps and the Au substrates were bonded by surface activated bonding using Ar plasma. As a result, the resistance of CNT bumps including interconnect resistance between them was achieved ~10^-3 Ω, that was equivalent value with conventional solder alloy.

Keywords

argon; bonding processes; carbon nanotubes; gold; integrated circuit interconnections; multilayers; plasma deposition; Ar; Au substrates; C:Au; bump shaped vertically aligned mutliwalled carbon nanotubes; carbon nanotube bumps; interconnect resistance; multilayer interconnect; plasma magnetron sputtering; surface activated bonding; Bonding; Carbon nanotubes; Gold; Integrated circuit interconnections; Substrates; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4673-0743-7

Type

conf

DOI

10.1109/LTB-3D.2012.6238079

Filename

6238079