DocumentCode :
2597511
Title :
Circuit Technologies For A Single-1.8V Flash Memory
Author :
Tanzawa, T. ; Tanaka, T. ; Takeuchi, K. ; Nakamura, H.
Author_Institution :
Microelectronics Engirwring Laboratory, Toshiba Corporation 1000-1, Kasama-cho, Sakae-ku, Yokohama, 247, JAPAN
fYear :
1997
fDate :
12-14 June 1997
Firstpage :
63
Lastpage :
64
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-76-X
Type :
conf
DOI :
10.1109/VLSIC.1997.623808
Filename :
623808
Link To Document :
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