Title :
Low temperature metal interdiffusion bonding for micro devices
Author :
Frömel, J. ; Lin, Y.-C. ; Wiemer, M. ; Gessner, T. ; Esashi, Masayoshi
Author_Institution :
Fraunhofer ENAS, Chemnitz, Germany
Abstract :
We demonstrate solid liquid interdiffusion bonding by gallium and gold as bonding material and show the bonding at 40°C. Because of the low melting point of gallium of 29.8°C several difficulties for processing the gallium exists. We could successful develop deposition, structuring and bonding processes.
Keywords :
bonding processes; gallium; gold; bonding material; deposition process; gallium; gold; low melting point; low temperature metal interdiffusion bonding; micro devices; solid liquid interdiffusion bonding; structuring process; temperature 29.8 C; temperature 40 C; Bonding; Educational institutions; Gallium; Gold; Liquids;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238080
