Title :
Low temperature Au-Au flip chip bonding with VUV/O3 treatment for 3D integration
Author :
Okada, Akiko ; Nimura, Masatsugu ; Unami, Naoko ; Shigetou, Akitsu ; Noma, Hirokazu ; Sakuma, Katsuyuki ; Shoji, Shuichi ; Mizuno, Jun
Author_Institution :
Waseda Univ., Tokyo, Japan
Abstract :
This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O3 treatment can remove organic contaminants without damages. The Au-Au bonding with VUV/O3 treatment was achieved at 200°C. The average shear strength was about 80 MPa per unit area. Therefore, it was proved that VUV/O3 treatment is effective in Au-Au bonding.
Keywords :
bonding processes; flip-chip devices; gold; integrated circuit manufacture; oxygen; surface treatment; three-dimensional integrated circuits; 3D integration; Au-Au; O3; low temperature bonding; low temperature flip chip bonding; organic contaminants; pressure 80 MPa; temperature 200 C; vacuum ultraviolet irradiation; Acoustics; Bonding; Gold; Plasma temperature; Radiation effects; Surface treatment;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238082
