DocumentCode
2597555
Title
Low-temperature wafer bonding using sub-micron gold particles for wafer-level MEMS packaging
Author
Ishida, H. ; Ogashiwa, T. ; Kanehira, Y. ; Ito, S. ; Yazaki, T. ; Mizuno, J.
Author_Institution
SUSS MicroTec KK, Yokohama, Japan
fYear
2012
fDate
22-23 May 2012
Firstpage
173
Lastpage
173
Abstract
Low-temperature wafer bonding using sub-μm gold particles together with wafer-level pattern transfer method has been developed. Sub-μm Au particle patterns were successfully transferred at 150°C and wafer bonding was performed at 200°C. Surface compliant performance was demonstrated by compression deformation measurement.
Keywords
deformation; electronics packaging; low-temperature techniques; micromechanical devices; semiconductor device packaging; wafer bonding; Au; compression deformation measurement; low-temperature wafer bonding; sub-μm Au particle patterns; submicron gold particles; surface compliant performance; temperature 150 degC; temperature 200 degC; wafer bonding; wafer-level MEMS packaging; wafer-level pattern transfer method; Gold; Micromechanical devices; Packaging; Surface topography; Surface treatment; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4673-0743-7
Type
conf
DOI
10.1109/LTB-3D.2012.6238083
Filename
6238083
Link To Document