Title :
W-band GaN power amplifier MMICs
Author :
Brown, Andrew ; Brown, Kenneth ; Chen, Jiann-Jong ; Hwang, K.C. ; Kolias, N. ; Scott, Ryan
Author_Institution :
Raytheon, Rancho Cucamonga, United States
Abstract :
Summary form only given, as follows. An advanced GaN semiconductor process has made possible the design and fabrication of W-band power amplifier MMICs with unprecedented performance. Power amplifier MMICs have been designed and fabricated that demonstrate output powers of 1.7 watts, power added efficiencies greater than 20%, and small signal gains of 21 dB. In addition, the compactness of these MMIC designs have allowed for MMIC power densities (MMIC output power relative to MMIC area) exceeding 1/2 watt per square mm.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973491
