DocumentCode
2597573
Title
An Improved Model for Ion Implantation in Two-Dimensions and Application to the Analysis of LDD Device Performance
Author
Crandle, T.L. ; Motzny, S.J. ; Ward, D.E. ; Grabowski, W.B. ; Pack, R.C.
Author_Institution
Technology Modeling Associates
fYear
1990
fDate
3-4 Jun 1990
Firstpage
93
Lastpage
94
Keywords
Electric breakdown; Etching; FETs; Implants; Ion implantation; Monte Carlo methods; Performance analysis; Predictive models; Scattering; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
Type
conf
DOI
10.1109/NUPAD.1990.748293
Filename
748293
Link To Document