DocumentCode :
2597651
Title :
High-efficiency Long Lifetime AlGaAs/GaAs Light Emitting Diodes On Si Substrates
Author :
Sakai, S. ; Yoshimi, S. ; Wada, N.
Author_Institution :
Tokushima University
fYear :
1992
fDate :
July 29 1992-Aug. 12 1992
Keywords :
Annealing; Etching; Fabrication; Gallium arsenide; Light emitting diodes; Neodymium; Photoluminescence; Power generation; Radiative recombination; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels, LEOS 1992 Summer Topical Meeting Digest on
Conference_Location :
Santa Barbara, CA, USA
Type :
conf
DOI :
10.1109/LEOSST.1992.697468
Filename :
697468
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2597651
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