Title :
High speed measurement of FET Vth at low Id
Author :
Norimatsu, Hideyuki
Author_Institution :
Yokogawa Hewlett-Packard, Tokyo, Japan
Abstract :
High-speed measurement of field-effect transistor (FET) threshold voltage at low drain current has been achieved by using an analog feedback method with proper guarding techniques. The method can be applied to process control test structure FETs and/or to characterize FETs which may be formed in high-density metal-oxide semiconductor large-scale integration circuits. Ease of operation has been augmented by dedicated software. With correct application of the guard technique, it is proved that Vth at low Id such as 1 nA can be measured in a reasonable measurement time.
Keywords :
MOS integrated circuits; insulated gate field effect transistors; large scale integration; process control; semiconductor device testing; voltage measurement; 1 nA; FET; MOSFET; analog feedback method; dedicated software; field-effect transistor; guarding techniques; high speed technique; high-density metal-oxide semiconductor large-scale integration circuits; low drain current; process control test structure FETs; threshold voltage; voltage measurement; Circuit testing; Current measurement; FETs; Feedback; Integrated circuit measurements; Process control; Semiconductor device testing; Threshold voltage; Time measurement; Velocity measurement;
Conference_Titel :
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN :
0-87942-714-0
DOI :
10.1109/ICMTS.1989.39276
