Title :
Derivation of Delbruck´s Model for Random Failure (For Semiconductor Materials): Its Identification with the Arrhenius Model; and Its Experimental Verification
Author :
Pershing, A.V. ; Hollingsworth, G.E.
Author_Institution :
Lockheed Missiles and Space Company, Sunnyvale, California
Keywords :
Crystallization; Energy measurement; Entropy; Kelvin; Mathematical model; Missiles; Physics; Semiconductor materials; Silicon; Temperature;
Conference_Titel :
Physics of Failure in Electronics, 1963. Second Annual Symposium on the
Conference_Location :
Chicago, IL, USA
DOI :
10.1109/IRPS.1963.362237
