MOSFET effective dimensions determination for VLSI process evaluation

The author demonstrates that by using an extended mobility model, even for 1- mu m lightly doped drain devices, in VLSI processes, the transconductance as originally defined by H.K.J. Ihantola and J.L. Moll (1964) regains its original interpretation, being proportional to the effective channel width and to the inverse of the effective channel length. The use of these dimensions in a fast analytical MOSFET model parameter extraction system has turned the determination of effective MOSFET dimensions into a useful tool for VLSI process evaluation. Some examples of its use are given.